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NTP45N06L, NTB45N06L
4000
3600
3200
2800
V DS = 0 V
C iss
C rss
V GS = 0 V
T J = 25 ° C
6
5
4
Q 1
Q T
Q 2
V GS
2400
2000
1600
1200
C iss
3
2
800
400
C oss
C rss
1
I D = 45 A
T J = 25 ° C
0
10
5 V GS 0 V DS 5
10
15
20
25
0
0
4
8
12
16
20
24
GATE?TO?SOURCE OR DRAIN?TO?SOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
Q g , TOTAL GATE CHARGE (nC)
Figure 8. Gate?to?Source and
Drain?to?Source Voltage vs. Total Charge
1000
V DS = 30 V
I D = 45 A
V GS = 5 V
t r
48
40
V GS = 0 V
T J = 25 ° C
100
t f
t d(off)
32
24
16
8
t d(on)
10
1
10
100
0
0.6
0.64 0.68 0.72 0.76 0.8
0.84 0.88 0.92 0.96 1
1000
R G , GATE RESISTANCE ( W )
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
280
V SD , SOURCE?TO?DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
100
10
V GS = 15 V
SINGLE PULSE
T C = 25 ° C
dc
10 ms
240
200
160
120
I D = 45 A
1 ms
1
R DS(on) Limit
Thermal Limit
Package Limit
100 m s
80
40
0.1
0.10
1
10
100
0
25
50
75
100
125
150
175
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
5
T J , STARTING JUNCTION TEMPERATURE ( ° C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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